Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications
نویسندگان
چکیده
In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (∼3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.
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ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 11 شماره
صفحات -
تاریخ انتشار 2014